Strong magnetoresistance effects are often observed in ferromagnet-nonmagnetmultilayers, which are exploited in state-of-the-art magnetic field sensing anddata storage technologies. In this work we report a novelcurrent-perpendicular-to-plane magnetoresistance effect in multilayer grapheneas grown on a catalytic nickel surface by chemical vapor deposition. A negativemagnetoresistance effect of 10^4% has been observed, which persists even atroom temperature. This effect is correlated with the shape of the 2D peak aswell as with the occurrence of D peak in the Raman spectrum of the as-grownmultilayer graphene. The observed magnetoresistance is extremely high ascompared to other known materials systems for similar temperature and fieldrange and can be qualitatively explained within the framework of "interlayermagnetoresistance" (ILMR).
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